스퍼터링 타겟(Sputtering Targets)
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Alloy Target
Material Formula Standard Purities,
%
Theoretical Density,
g/㎤
Melting Point,
Fabrication Method* Applications
Aluminum-copper Al-xCu 99.999
99.99
2.70 660 1 Conductor contacts in microcircuits.
Aluminum-silicon Al-xSi
Aluminum-silicon
copper
Al-xSi-yCu
Chromium-silicon
monoxide
70wt.% Cr-30wt. %SiO 99.9 4.20 - 2 Excellent thin film resistors for integrated circuits.
60wt.%Cr - 40 wt.% SiO 3.69 -
50wt.%Cr - 50wt.% SiO 3.29 -
x wt.% Cr - y wt.% SiO varies varies
Cobalt-iron xCo - yFe 99.99 varies varies 1 & 2 Magnetic films.
Cobalt-nickle xCo - yNi 8.90 1475
Gallium arsenide GaAs 99.999 5.3 1240 2 Semiconductors.
Gallium phosphide GaP 4.14 1480
Inconel 78 wt.% Ni - 15 wt.% Cr - 7wt.% Fe 99.999 8.51 1425 1 Good corrosion resistance. Thin film resistance. Good film adherence.
Indium antimonide InSb 99.999 5.8 523 2 Semiconductors.Masers.
Coherent emission from diffused diodes.
Semiconductors.Oxidize to give transparent, conductive films.
Indium arsenide InAs 5.66 943
Indium phosphide InP 4.79 1058 at
21 atm
Indium-tin xIn - ySn 99.999
99.99
7.3 varies 1
Manganese-iron xMn - yFe 99.99 varies varies 2 Magnetic films.
Manganese-nickel xMn - yNi
Nickel-chromium x wt.% Ni -
y wt.% Cr
99.9 7.96-8.48 1340-1675 1 & 2 Thin film resistors. Good adherence on non-metals. Good corrosion resistance.
Nickel-iron 81wt.% Ni - 19wt.% Fe 99.99 8.00 1473 1 & 2 Thin films for magnetic heads. Bubble memory devices.
xNi - yFe varies varies
Nickel-titanium xNi - yTi 99.9 varies varies 1 & 2 A "shape memory" alloy. Used in circuits; vanadium renders nickel non-magnetic.
Nickel-vanadium 93wt.% Ni - 7 wt.% V 99.7 8.60 1460
Niobium-titanium xNb - xTi 99.99 varies varies 2 Proprietary electronic uses.
Niobium-zirconium xNb - xZr
Permalloy 79wt.% Ni - 16.7wt.% Fe - 4wt.% Mo - 0.3wt.%Mn 99.5 8.74 - 1 & 2 Thin films for magnetic heads. Bubble memory devices.
Terbium-iron xTv - yFe 99.9 varies varies 2 Magneto-optic, sensitive to light changing flux fields.
Tungsten-titanium 90wt.% W - 10wt.%Ti 99.995
(Na<1 ppm)
14.6 1860 2 Diffusion barriers, primarily between Pt silicide contacts and other interconnects.
99.9
(Na = 300-500 ppm)
99.9(Na<10 ppm)
Vanadium-aluminum xV-yAl 99.7 varies varies 2 Proprietary research uses.
Zirconium-aluminum

** Fabrication Methods : (1) Vacuum melted (2) Hot-pressed